bat54ht1g ? schottky barrier diodes ? 2004 fairchild semiconductor corporation www.fairchildsemi.com bat54ht1g rev. 1.2.0 1 july 2013 bat54ht1g schottky barrier diodes ordering information absolute maximum ratings (1) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. * these ratings are limiting values above which th e serviceability of the diode may be impaired. note: 1)these ratings are based on a maximum junction temperature of 150 c. these are steady limits. the factory should be cons ulted on applications involv ing pulsed or low duty cycle operations. part number marking package packing method bat54ht1g a2 sod-323 2l tape and reel symbol parameter value units v rrm maximum repetitive reverse voltage 30 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second 600 ma t stg storage temperature range -65 to +150 c t j operating junction temperature -55 to +150 c connection diagram 1 2 2 1 a2 sod-323
bat54ht1g ? schottky barrier diodes ? 2004 fairchild semiconductor corporation www.fairchildsemi.com bat54ht1g rev. 1.2.0 2 thermal characteristics electrical characteristics values are at t a = 25c unless otherwise noted. symbol parameter value units p d power dissipation 200 mw r ja thermal resistance, junction to ambient 600 c/w symbol parameter test conditions min. max. units v r breakdown voltage i r = 10 a30v v f forward voltage i f = 0.1 ma 240 mv i f = 1.0 ma 320 mv i f = 10 ma 400 mv i f = 30 ma 500 mv i f = 100 ma 0.8 v i r reverse leakage v r = 25 v 2.0 a c t to ta l c a pa c i ta n c e v r = 1 v, f = 1.0 mhz 10 pf t rr reverse recovery time i f = i r = 10 ma, i rr = 1.0 ma, r l = 100 5.0 ns
bat54ht1g ? schottky barrier diodes ? 2004 fairchild semiconductor corporation www.fairchildsemi.com bat54ht1g rev. 1.2.0 3 typical performance characteristics figure 1. forward current characteristics figure 2. reverse leakage current figure 3. junction capacitance 1e-6 1e-5 1e-4 1e-3 0.01 0.1 0.0 0.2 0.4 0.6 0.8 75 o c 150 o c 25 o c 100 o c 125 o c forward voltage drop, v f [v] forward current, i f [a] 0 5 10 15 20 25 30 1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 150 o c 125 o c 100 o c 75 o c 25 o c reverse current, i r [a] reverse voltage, v r [v] 0246810 3 4 5 7 8 9 11 12 13 15 16 juntion capacitance, c j [pf] reverse voltage, v r [v]
bat54ht1g ? schottky barrier diodes ? 2004 fairchild semiconductor corporation www.fairchildsemi.com bat54ht1g rev. 1.2.0 4 physical dimensions figure 4. 2-lead, sod323, jeit a sc76 (formed leads) (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/so/sod323.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-sod323_bk.pdf . sod-323 2l
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